The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP grown by molecular beam epitaxy are investigated. When InGaAs:Rh is used as an ultrafast photoconductor, carrier lifetimes as short as 100 fs for optically excited electrons are measured. Rh doping compensates free carriers so that a near intrinsic carrier concentration can be achieved. At the same time, InGaAs:Rh exhibits a large electron mobility of 1000 cm2/V s. Therefore, this material is a very promising candidate for application as a semi-insulating layer, THz antenna, or semiconductor saturable absorber mirror.

中文翻译：

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掺铑 InGaAs：一种卓越的超快光电导体

研究了铑 (Rh) 作为 InGaAs 晶格中与通过分子束外延生长的 InP 相匹配的深能级掺杂剂的性质。当 InGaAs:Rh 用作超快光电导体时，测量到光激发电子的载流子寿命短至 100 fs。Rh 掺杂补偿自由载流子，从而可以实现接近本征载流子浓度。同时，InGaAs:Rh 表现出 1000 cm2/V s 的大电子迁移率。因此，这种材料非常适合用作半绝缘层、太赫兹天线或半导体可饱和吸收镜。