We report on distinct light emission from two-dimensional electron gas (2DEG) at a lattice-matched (LM) In0.12Al0.88N/Al0.21Ga0.79N heterointerface. The recombination between the electrons in the 2DEG in the ground state E1 and photoexcited holes in the Al0.21Ga0.79N layer was identified. In contrast to GaN channel-based heterostructures (HSs), larger activation energy of the 2DEG-related emission from LM In0.12Al0.88N/Al0.21Ga0.79N HS was obtained to be approximately 17 meV, which enables the distinguished 2DEG photoluminescence (PL) peak to be more thermally stable. Moreover, the existence of the 2DEG accelerates the reduction of the PL lifetime of the emission from Al0.21Ga0.79N. Compared to the general 2DEG PL feature with a broad recombination band in GaN channel-based HSs, the improved emission characteristics of the 2DEG in the In0.12Al0.88N/Al0.21Ga0.79N HS were attributed to electron localization in a deep triangular potential well, large 2DEG density induced by the In0.12Al0.88N layer, and the i...

中文翻译：

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二维电子气在晶格匹配的 InAlN/AlGaN 异质界面上发出独特的光

我们报告了二维电子气 (2DEG) 在晶格匹配 (LM) In0.12Al0.88N/Al0.21Ga0.79N 异质界面上的独特发光。确定了基态 E1 中 2DEG 中的电子与 Al0.21Ga0.79N 层中的光激发空穴之间的复合。与基于 GaN 通道的异质结构 (HS) 相比，LM In0.12Al0.88N/Al0.21Ga0.79N HS 的 2DEG 相关发射的更大活化能约为 17 meV，这使得 2DEG 光致发光（ PL) 峰更热稳定。此外，2DEG 的存在加速了 Al0.21Ga0.79N 发射的 PL 寿命的降低。与基于 GaN 通道的 HSs 中具有宽复合带的一般 2DEG PL 特征相比，In0.12Al0.2DEG 中 2DEG 的改进发射特性。