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Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
Applied Physics Letters ( IF 3.5 ) Pub Date : 2018-03-05 , DOI: 10.1063/1.5017094
Xuan Tian 1 , Shigehisa Shibayama 1 , Tomonori Nishimura 1 , Takeaki Yajima 1 , Shinji Migita 2 , Akira Toriumi 1
Affiliation  

The ferroelectric properties of ultrathin Y-doped HfO2 films were investigated. Ferroelectricity was demonstrated experimentally in 3 nm-thick Y-doped HfO2 via direct detection of displacement currents during polarization switching. The dependence on the HfO2 thickness within the 30 to 3 nm range revealed that the ferroelectric properties decrease rapidly below a critical thickness. In the ultrathin HfO2 region, methods such as higher Y doping or metal capping annealing were required to further stabilize the ferroelectric phase. These methods could be used to enhance the switchable polarization (Psw) to 35 μC/cm2 in 5 nm- and 10 μC/cm2 in 3 nm-thick Y-doped HfO2. This paper indicates that HfO2 ferroelectricity is scalable even in the ultrathin region.

中文翻译:

在低至 3 nm 的超薄区域中铁电 HfO2 的演变

研究了超薄 Y 掺杂 HfO2 薄膜的铁电性能。通过在极化切换期间直接检测位移电流,在 3 nm 厚的 Y 掺杂 HfO2 中实验证明了铁电性。在 30 到 3 nm 范围内对 HfO2 厚度的依赖性表明,铁电性能在临界厚度以下迅速下降。在超薄 HfO2 区域,需要使用更高的 Y 掺杂或金属覆盖退火等方法来进一步稳定铁电相。这些方法可用于将可切换偏振 (Psw) 提高到 5 nm 中的 35 μC/cm2 和 3 nm 厚 Y 掺杂 HfO2 中的 10 μC/cm2。本文表明,即使在超薄区域,HfO2 铁电性也是可扩展的。
更新日期:2018-03-05
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