The giant tunnelling electroresistance (TER) and memristive behaviours of ferroelectric tunnel junctions make them promising candidates for future information storage technology. Using conducting ferromagnetic layers as electrodes results in multiferroic tunnel junctions (MFTJs) which show spin dependent transport. The tunnelling magnetoresistance (TMR) of such structures can be reversibly controlled by electric pulsing owing to ferroelectric polarisation-dependent spin polarisation at the ferroelectric/ferromagnetic interface. Here, we show multilevel electric control of both TMR and TER of MFTJs, which indicates the bi-ferroic or magneto-electric memristive properties. This effect is realised by manipulating the ferroelectric domain configuration via non-volatile partial ferroelectric switching obtained by applying low voltage pulses to the junction. Through electrically modulating the ratio between up- and down-polarised ferroelectric domains, a broad range of TMR (between ∼3% and ∼30%) and TER (∼1000%...

中文翻译：

---

多铁性隧道结的双铁性忆阻特性

铁电隧道结的巨大隧道电阻（TER）和忆阻行为使它们成为未来信息存储技术的有希望的候选者。使用导电铁磁层作为电极会产生多铁性隧道结 (MFTJ)，其显示自旋相关传输。由于铁电/铁磁界面处与铁电极极化相关的自旋极化，这种结构的隧道磁阻（TMR）可以通过电脉冲可逆地控制。在这里，我们展示了 MFTJ 的 TMR 和 TER 的多级电控制，这表明了双铁性或磁电忆阻特性。这种效果是通过向结施加低电压脉冲获得的非易失性部分铁电开关来操纵铁电域配置来实现的。通过电调节上极化和下极化铁电畴之间的比率，广泛的 TMR（介于 ~3% 和 ~30% 之间）和 TER（~1000%...