Defect-rich, boron (B) and nitrogen (N) dual-doped and inert BN covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent BN bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.

中文翻译：

---

富含缺陷，无硼氮键的双掺杂石墨烯，可实现高效的氧还原反应

可以通过两步掺杂与化学刻蚀相结合的方法，成功地合成出富含缺陷，硼（B）和氮（N）的双掺杂惰性B N共价键无石墨烯（BNG）。BNG的B和N掺杂度和表面积可以通过化学刻蚀方便地提高，而不会形成惰性的共价B N键。与未蚀刻的BNG和市售的Pt / C催化剂相比，如此获得的多孔BNG对氧还原反应具有更优异的电催化活性。