Highly-ordered silicon nanowire arrays for photoelectrochemical hydrogen evolution: an investigation on the effect of wire diameter, length and inter-wire spacing†,Sustainable Energy & Fuels

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Highly-ordered silicon nanowire arrays for photoelectrochemical hydrogen evolution: an investigation on the effect of wire diameter, length and inter-wire spacing†
Sustainable Energy & Fuels ( IF 5.0 ) Pub Date : 2018-03-08 00:00:00 , DOI: 10.1039/c7se00591a
Sitaramanjaneya Mouli Thalluri _{1,

2,

3} , Jerome Borme _{1,

2,

3} , Dehua Xiong _{1,

2,

3} , Junyuan Xu _{1,

2,

3} , Wei Li _{1,

2,

3} , Isilda Amorim _{1,

2,

3} , Pedro Alpuim _{1,

2,

3,

4,

5} , Joao Gaspar _{1,

2,

3} , Helder Fonseca _{1,

2,

3} , Liang Qiao _{6,

7,

8,

9} , Lifeng Liu _{1,

2,

3}

Affiliation

Vertically-aligned, highly-ordered silicon nanowire (SiNW) array photocathodes are fabricated employing e-beam lithography followed by deep reactive ion etching (DRIE) of Si. The effect of structural parameters of SiNWs, including wire diameter, length and inter-wire spacing, on their photoelectrocatalytic hydrogen evolution performance has been systematically investigated. Within the range of dimensions under study, the SiNW photocathode with a wire diameter of 200 nm, a length of 1 μm and an inter-wire spacing of 175 nm shows the best performance exhibiting a maximal saturated photocurrent density of 52 mA cm⁻² and an onset potential (@−1 mA cm⁻²) of −0.17 V versus reversible hydrogen electrode. These lithography-patterned SiNWs with homogeneous structural parameters can help establish an unobscured structure–activity relation and facilitate Si-based photoelectrode design.

中文翻译：

用于光电化学氢析出的高度有序的硅纳米线阵列：对线径，长度和线间距的影响的研究†

垂直对齐，高度有序的硅纳米线（SiNW）阵列光阴极采用电子束光刻技术，然后进行深硅反应离子刻蚀（DRIE）制成。已经系统地研究了SiNWs的结构参数，包括线径，长度和线间距，对它们的光电催化产氢性能的影响。在研究的尺寸范围内，线径为200 nm，长度为1μm，线间间距为175 nm的SiNW光电阴极表现出最佳性能，其最大饱和光电流密度为52 mA cm ^-2，并且相对于-0.17 V的起始电位（@ -1 mA cm ^-2）可逆氢电极。这些具有均匀结构参数的光刻图案化的SiNW可以帮助建立清晰的结构-活性关系，并有助于基于Si的光电极设计。

更新日期：2018-03-08

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