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Binding Sulfur‐Doped Nb2O5 Hollow Nanospheres on Sulfur‐Doped Graphene Networks for Highly Reversible Sodium Storage
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-03-08 , DOI: 10.1002/adfm.201800394 Fanfan Liu 1 , Xiaolong Cheng 1 , Rui Xu 1 , Ying Wu 1 , Yu Jiang 1 , Yan Yu 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-03-08 , DOI: 10.1002/adfm.201800394 Fanfan Liu 1 , Xiaolong Cheng 1 , Rui Xu 1 , Ying Wu 1 , Yu Jiang 1 , Yan Yu 1
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Orthorhombic Nb2O5 (T‐Nb2O5) has recently attracted great attention for its application as an anode for sodium ion batteries (NIBs) owing to its patulous framework and larger interplanar lattice spacing. Sulfur‐doped T‐Nb2O5 hollow nanospheres (diameter:180 nm) uniformly encapsulate into sulfur‐doped graphene networks (denoted: S‐Nb2O5 HNS@S‐rGO) using hard template method. The 3D ordered porous structure not only provides good electronic transportation path but also offers outstanding ionic conductive channels, leading to an improved sodium storage performance. In addition, the introduction of sulfur to graphene and Nb2O5 leads to oxygen vacancy and enhanced electronic conductivity. The sodium storage performance of S‐Nb2O5 HNS@S‐rGO is unprecedented. It delivers a reversible capacity 215 mAh g−1 at 0.5 C over 100 cycles. In addition, it also possesses a great high‐rate capability, retaining a stable capacity of 100 mAh g−1 at 20 C after 3000 cycles. This design demonstrates the potential applications of Nb2O5 as anode for high performance NIBs.
中文翻译：
将硫掺杂的Nb2O5空心纳米球与硫掺杂的石墨烯网络结合以实现高度可逆的钠存储
正交晶Nb 2 O 5（T-Nb 2 O 5）由于其框架大而且平面内晶格间距大，最近作为钠离子电池（NIB）的阳极而受到关注。使用硬模板法将掺硫的T-Nb 2 O 5中空纳米球（直径：180 nm）均匀地封装到掺硫的石墨烯网络（表示为：S-Nb 2 O 5 HNS @ S-rGO）中。3D有序多孔结构不仅提供了良好的电子传输路径，而且还提供了出色的离子导电通道，从而改善了钠存储性能。此外，将硫引入石墨烯和Nb中2 O 5导致氧空位和增强的电子电导率。S-Nb 2 O 5 HNS @ S-rGO的钠存储性能是前所未有的。它在100循环内于0.5 C时可逆容量为215 mAh g -1。此外，它还具有很高的高倍率能力，在3000次循环后，在20 C下保持100 mAh g -1的稳定容量。该设计演示了Nb 2 O 5作为高性能NIB阳极的潜在应用。
更新日期：2018-03-08
中文翻译：
将硫掺杂的Nb2O5空心纳米球与硫掺杂的石墨烯网络结合以实现高度可逆的钠存储
正交晶Nb 2 O 5（T-Nb 2 O 5）由于其框架大而且平面内晶格间距大，最近作为钠离子电池（NIB）的阳极而受到关注。使用硬模板法将掺硫的T-Nb 2 O 5中空纳米球（直径：180 nm）均匀地封装到掺硫的石墨烯网络（表示为：S-Nb 2 O 5 HNS @ S-rGO）中。3D有序多孔结构不仅提供了良好的电子传输路径，而且还提供了出色的离子导电通道，从而改善了钠存储性能。此外，将硫引入石墨烯和Nb中2 O 5导致氧空位和增强的电子电导率。S-Nb 2 O 5 HNS @ S-rGO的钠存储性能是前所未有的。它在100循环内于0.5 C时可逆容量为215 mAh g -1。此外，它还具有很高的高倍率能力，在3000次循环后，在20 C下保持100 mAh g -1的稳定容量。该设计演示了Nb 2 O 5作为高性能NIB阳极的潜在应用。
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