Graphene exhibits superior mechanical strength, high thermal conductivity, strong light–matter interactions, and, in particular, exceptional electronic properties. These merits make graphene an outstanding material for numerous potential applications. However, a graphene-based high-performance transistor, which is the most appealing application, has not yet been produced, which is mainly due to the absence of an intrinsic electronic bandgap in this material. Therefore, bandgap opening in graphene is urgently needed, and great efforts have been made regarding this topic over the past decade. In this review article, we summarise recent theoretical and experimental advances in interfacial engineering to achieve bandgap opening. These developments are divided into two categories: chemical engineering and physical engineering. Chemical engineering is usually destructive to the pristine graphene lattice via chemical functionalization, the introduction of defects, doping, chemical bonds with substrates, and quantum confinement; the latter largely maintains the atomic structure of graphene intact and includes the application of an external field, interactions with substrates, physical adsorption, strain, electron many-body effects and spin–orbit coupling. Although these pioneering works have not met all the requirements for electronic applications of graphene at once, they hold great promise in this direction and may eventually lead to future applications of graphene in semiconductor electronics and beyond.

中文翻译：

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石墨烯带隙的界面工程

石墨烯具有卓越的机械强度，高导热性，强的光-物质相互作用，尤其是出色的电子性能。这些优点使石墨烯成为众多潜在应用中的杰出材料。然而，尚未生产出最有吸引力的基于石墨烯的高性能晶体管，这主要是由于该材料中不存在固有的电子带隙。因此，迫切需要打开石墨烯中的带隙，并且在过去的十年中，已经为这个话题做出了很大的努力。在这篇综述文章中，我们总结了实现带隙开放的界面工程的最新理论和实验进展。这些发展分为两类：化学工程和物理工程。通过化学功能化，引入缺陷，掺杂，与基底的化学键以及量子限制；后者在很大程度上保持了石墨烯的原子结构完整，包括外场的应用，与底物的相互作用，物理吸附，应变，电子多体效应和自旋轨道耦合。尽管这些开创性工作不能立即满足石墨烯电子应用的所有要求，但它们在这一方向上具有很大的希望，并最终可能导致石墨烯在半导体电子学及其他领域的未来应用。