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Multilayer Functional Tapes Cofired at 450 °C: Beyond HTCC and LTCC Technologies
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-03-07 00:00:00 , DOI: 10.1021/acsami.8b00978
Jobin Varghese 1 , Tuomo Siponkoski 1 , Maciej Sobocinski 1 , Timo Vahera 1 , Heli Jantunen 1
Affiliation  

This paper reports the first ultralow sintering temperature (450 °C) cofired multifunctional ceramic substrate based on a commercial lead zirconium titanate (PZ29)–glass composite, which is fabricated by tape casting, isostatic lamination, and sintering. This substrate was prepared from a novel tape casting slurry composition suitable for cofiring at low temperatures with commercial Ag electrodes at 450 °C. The green cast tape and sintered substrate showed a surface roughness of 146 and 355 nm, respectively, suitable for device-level fabrication by postprocessing. Additionally, the ferroelectric and piezoelectric studies disclosed low remnant polarization due to the dielectric glass matrix with average values of piezoelectric coefficient (+d33) and voltage coefficient (+g33) of 17 pC/N and 30 mV/N, respectively. The dielectric permittivity and loss value of the sintered substrates were 57.8 and 0.05 respectively, at 2.4 GHz. The variation of relative permittivity on temperature dependence in the range of −40 to 80 °C was about 23%, while the average linear coefficient of thermal expansion was 6.9 ppm/°C in the measured temperature range of 100–300 °C. Moreover, the shelf life of the tape over 28 months was studied through measurement of the stability of the dielectric properties over time. The obtained results open up a new strategy for the fabrication of next-generation low-cost functional ceramic devices prepared at an ultralow temperature in comparison to the high-temperature cofired ceramic and low-temperature cofired ceramic technologies.

中文翻译:

450°C共烧的多层功能带:超越HTCC和LTCC技术

本文报道了基于商业化钛酸铅锆(PZ29)-玻璃复合材料的首个超低烧结温度(450°C)共烧多功能陶瓷基板,该复合材料通过流延铸造,等静压层压和烧结制成。该基材由适合在低温下与工业Ag电极在450°C下共烧的新型流延浆料组合物制备。生铸带和烧结的基材分别显示出146和355 nm的表面粗糙度,适合通过后处理进行器件级制造。此外,铁电和压电研究显示,由于介电玻璃基质具有压电系数(+ d 33)和电压系数(+ g33)分别为17 pC / N和30 mV / N。烧结后的基板的介电常数和损耗值在2.4 GHz时分别为57.8和0.05。在-40至80°C的范围内,相对介电常数随温度的变化约为23%,而在100–300°C的测量温度范围内,平均热膨胀线性系数为6.9 ppm /°C。此外,通过测量介电性能随时间的稳定性,研究了胶带在28个月内的保存期限。与高温共烧陶瓷和低温共烧陶瓷技术相比,所获得的结果为在超低温下制备下一代低成本功能陶瓷器件开辟了新的战略。
更新日期:2018-03-07
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