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Nanostructured Unsubstituted Polythiophene Films Deposited Using Oxidative Chemical Vapor Deposition: Hopping Conduction and Thermal Stability
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-03-07 , DOI: 10.1002/admi.201701513 Sunghwan Lee 1 , David C. Borrelli 2 , Won Jun Jo 2 , Austin S. Reed 1 , Karen K. Gleason 2
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-03-07 , DOI: 10.1002/admi.201701513 Sunghwan Lee 1 , David C. Borrelli 2 , Won Jun Jo 2 , Austin S. Reed 1 , Karen K. Gleason 2
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Unsubstituted polythiophene (PT), a promising material that is challenging to process into thin films due to its intrinsic insolubility, can be synthesized and deposited using unique oxidative chemical vapor deposition (oCVD) at room temperature. The conduction mechanism of nanostructured oCVD PT thin films is illuminated through the investigation of in situ conductivity measurements. It is identified that the 3D variable range hopping process governs the transport of charge carriers in oCVD PT thin films with an activation energy of ≈48 meV regardless of doping concentrations. It is also reported that the thermal stability of oCVD PT largely relies on the doping concentration of the material; oCVD PT demonstrates excellent thermal stability at temperatures up to 160 °C with carrier density values lower than ≈1 × 1017 cm−3, while higher doping leads to a reduction in conductivity at T >≈ 100 °C due to electron–hole recombination. X‐ray photoelectron spectroscopy analyses on the change in the concentrations of dopant anions (Cl− and FeCl4−) support the suggested mechanisms.
中文翻译：
使用氧化化学气相沉积法沉积的纳米结构未取代聚噻吩薄膜：跳跃传导和热稳定性
未取代的聚噻吩（PT）是一种很有前途的材料，由于其固有的不溶性而难以加工成薄膜，可以在室温下使用独特的氧化化学气相沉积（oCVD）进行合成和沉积。通过对原位电导率测量的研究，阐明了纳米结构的oCVD PT薄膜的导电机理。可以确定的是，无论掺杂浓度如何，3D可变范围跳变过程均以≈48meV的活化能控制oCVD PT薄膜中电荷载流子的传输。还据报道，oCVD PT的热稳定性在很大程度上取决于材料的掺杂浓度。oCVD PT在高达160°C的温度下表现出出色的热稳定性，载流子密度值低于≈1×10 17cm -3，而较高的掺杂量会由于电子-空穴复合而导致在T >≈100°C时电导率降低。X射线光电子能谱法在掺杂剂阴离子的浓度的变化分析（CL -和的FeCl 4 - ）支持建议的机制。
更新日期：2018-03-07
中文翻译：
使用氧化化学气相沉积法沉积的纳米结构未取代聚噻吩薄膜：跳跃传导和热稳定性
未取代的聚噻吩（PT）是一种很有前途的材料，由于其固有的不溶性而难以加工成薄膜，可以在室温下使用独特的氧化化学气相沉积（oCVD）进行合成和沉积。通过对原位电导率测量的研究，阐明了纳米结构的oCVD PT薄膜的导电机理。可以确定的是，无论掺杂浓度如何，3D可变范围跳变过程均以≈48meV的活化能控制oCVD PT薄膜中电荷载流子的传输。还据报道，oCVD PT的热稳定性在很大程度上取决于材料的掺杂浓度。oCVD PT在高达160°C的温度下表现出出色的热稳定性，载流子密度值低于≈1×10 17cm -3，而较高的掺杂量会由于电子-空穴复合而导致在T >≈100°C时电导率降低。X射线光电子能谱法在掺杂剂阴离子的浓度的变化分析（CL -和的FeCl 4 - ）支持建议的机制。
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