Nanostructuring Multilayer Hyperbolic Metamaterials for Ultrafast and Bright Green InGaN Quantum Wells,Advanced Materials

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Nanostructuring Multilayer Hyperbolic Metamaterials for Ultrafast and Bright Green InGaN Quantum Wells
Advanced Materials ( IF 27.4 ) Pub Date : 2018-03-07 , DOI: 10.1002/adma.201706411
Dylan Lu ₁ , Haoliang Qian ₁ , Kangwei Wang ₁ , Hao Shen ₁ , Feifei Wei ₁ , Yunfeng Jiang ₁ , Eric E. Fullerton _{1,

2} , Paul K. L. Yu _{1,

3} , Zhaowei Liu _{1,

2,

3}

Affiliation

Semiconductor quantum well (QW) light‐emitting diodes (LEDs) have limited temporal modulation bandwidth of a few hundred MHz due to the long carrier recombination lifetime. Material doping and structure engineering typically leads to incremental change in the carrier recombination rate, whereas the plasmonic‐based Purcell effect enables dramatic improvement for modulation frequency beyond the GHz limit. By stacking Ag‐Si multilayers, the resulting hyperbolic metamaterials (HMMs) have shown tunability in the plasmonic density of states for enhancing light emission at various wavelengths. Here, nanopatterned Ag‐Si multilayer HMMs are utilized for enhancing spontaneous carrier recombination rates in InGaN/GaN QWs. An enhancement of close to 160‐fold is achieved in the spontaneous recombination rate across a broadband of working wavelengths accompanied by over tenfold enhancement in the QW peak emission intensity, thanks to the outcoupling of dominating HMM modes. The integration of nanopatterned HMMs with InGaN QWs will lead to ultrafast and bright QW LEDs with a 3 dB modulation bandwidth beyond 100 GHz for applications in high‐speed optoelectronic devices, optical wireless communications, and light‐fidelity networks.

中文翻译：

用于超快和亮绿色InGaN量子阱的纳米结构双曲超材料。

由于载流子复合寿命长，半导体量子阱（QW）发光二极管（LED）的时间调制带宽有限，只有几百MHz。材料掺杂和结构工程通常会导致载流子复合率的增量变化，而基于等离激元的Purcell效应可大幅提高超出GHz限制的调制频率。通过堆叠Ag-Si多层，所得的双曲线超材料（HMM）在状态的等离子体密度中显示出可调谐性，可增强各种波长下的发光。在这里，利用纳米图案化的Ag-Si多层HMM来提高InGaN / GaN QW中的自发载流子复合率。由于占主导地位的HMM模式的耦合，在整个工作波长范围内的自发重组率提高了近160倍，同时QW峰值发射强度也提高了十倍以上。纳米图案HMM与InGaN QW的集成将导致超快和明亮的QW LED，其3 GHz调制带宽超过100 GHz，适用于高速光电设备，光学无线通信和保真网络。

更新日期：2018-03-07

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