In this work, high performance (Pb_0.97La_0.02)(Zr_0.66Sn_0.23Ti_0.11)O₃ polycrystalline antiferroelectric thin-film was successfully fabricated on (La_0.7Sr_0.3)MnO₃/Al₂O₃(0001) substrate via a cost-effectively chemical solution method. A large recoverable energy storage density (W_re) of 46.3 J/cm³ and high efficiency (η) of 84% were realized simultaneously under an electric field of 4 MV/cm by taking full advantage of the linear dielectric response after the electric field induced antiferroelectric-ferroelectric transition. Moreover, the PLZST thin-film displayed high temperature stability. With increasing temperature from 300 K to 380 K, the W_re decreased only 1.3%. The film also exhibited good fatigue endurance up to 1 × 10⁵ cycling under an electric field of 2.2 MV/cm. Our work underlines the importance of the interface quality between the film and the substrate and the important role of linear dielectric answer after saturation in the improvement of the energy storage density and efficiency of antiferroelectric materials.

在这项工作中，成功地通过（La _0.7 Sr _0.3）MnO ₃ / Al ₂ O ₃（0001）衬底成功地制备了高性能（Pb _0.97 La _0.02）（Zr _0.66 Sn _0.23 Ti _0.11）O ₃多晶反铁电薄膜。具有成本效益的化学溶液法。46.3 J / cm ³的大可回收能量存储密度（W _re）和高效率（η通过充分利用电场诱导的反铁电-铁电跃迁之后的线性介电响应，在4 MV / cm的电场下同时实现84％的）。此外，PLZST薄膜显示出高温稳定性。随着温度从300 K增加到380 K，W _re仅降低了1.3％。该膜在2.2 MV / cm的电场下，即使在1×10 ⁵循环下也表现出良好的耐疲劳性。我们的工作强调了膜与基底之间的界面质量的重要性，以及饱和后线性电介质答案对提高反铁电材料的能量存储密度和效率的重要作用。