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Observation of Nanosecond Hot Carrier Decay in Graphene
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2018-03-06 00:00:00 , DOI: 10.1021/acs.jpclett.8b00234 Lin Fan 1 , Suk Kyoung Lee 1 , Pai-Yen Chen 2 , Wen Li 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2018-03-06 00:00:00 , DOI: 10.1021/acs.jpclett.8b00234 Lin Fan 1 , Suk Kyoung Lee 1 , Pai-Yen Chen 2 , Wen Li 1
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An extremely long decay time of hot carriers in graphene at room temperature was observed for the first time by monitoring the photoinduced thermionic emission using a highly sensitive time-of-flight angle-resolved photoemission spectroscopy method. The emission persisted beyond 1 ns, two orders of magnitude longer than previously reported carrier decay. The long lifetime was attributed to the excitation of image potential states at very low laser fluencies.
中文翻译：
石墨烯中纳秒级热载流子衰减的观察
通过使用高灵敏度飞行时间角分辨光发射光谱法监测光诱导的热电子发射，首次观察到室温下石墨烯中热载流子的极长衰变时间。发射持续超过1 ns，比以前报道的载波衰减长两个数量级。长寿命归因于在非常低的激光通量下激发图像电势态。
更新日期：2018-03-06
中文翻译：
石墨烯中纳秒级热载流子衰减的观察
通过使用高灵敏度飞行时间角分辨光发射光谱法监测光诱导的热电子发射，首次观察到室温下石墨烯中热载流子的极长衰变时间。发射持续超过1 ns，比以前报道的载波衰减长两个数量级。长寿命归因于在非常低的激光通量下激发图像电势态。
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