Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp²-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

碳可以产生具有显着的电子，光学，机械和热学性质的各种低维纳米结构。这些特征使得碳纳米材料对于下一代存储器和存储设备特别有趣，例如电阻式随机存取存储器，相变存储器，自旋转移扭矩磁性随机存取存储器和铁电随机存取存储器。非易失性存储器在位密度和能效方面极大地受益于碳纳米材料的使用。在这篇评论中，我们讨论sp ²非易失性存储设备和架构中，碳杂化的碳基低维纳米结构，例如富勒烯，碳纳米管和石墨烯。研究了碳纳米材料作为存储电极，界面工程层，电阻切换介质以及可扩展的高性能存储选择器的应用。最后，我们在写入能量和时间方面比较了不同的存储技术，并重点介绍了在制造，集成和理解物理机制和材料特性方面的主要挑战。