Abstract We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

中文翻译：

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MOCVD法对Si衬底上无Au InAs和InAs/GaSb异质结构纳米线生长的温度影响

摘要 我们展示了通过金属有机化学气相沉积 (MOCVD) 在 Si (1 1 1) 衬底上垂直排列的无 Au InAs 和 InAs/GaSb 异质结构纳米线的生长。研究了生长温度对 InAs 和 InAs/GaSb 异质结构纳米线 (NW) 的形态和生长速率的影响。通过使用生长温度实现对 InAs NW 的直径和长度以及 GaSb 壳厚度的控制。随着 GaSb 生长温度的升高，由于衬底表面烷基分解的增加，GaSb 径向生长速率增加。吸附原子的扩散率随着 GaSb 生长温度的增加而增加，这导致锥形 GaSb 壳生长。扫描电子显微镜 (SEM) 和透射电子显微镜 (TEM) 测量表明，形态和壳厚度可以通过生长温度进行调整。电子显微镜还显示可以通过生长温度控制 InAs NW 核外径向和轴向上 GaSb 的形成。这项研究表明，可以通过适当的生长温度控制来控制 InAs 纳米线的生长和 GaSb 壳层厚度，这种技术对于未来纳米电子器件（如隧道 FET）的纳米线生长至关重要。