Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl₂ using Si-SiO₂ precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 10¹⁶ cm⁻³. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode.

使用Si-SiO ₂前驱体和石墨阳极，在熔融的CaCl ₂中电化学合成了表面上显着发达的硅上的碳化碳涂层。能量色散X射线光谱显示约四分之一的结构（以原子％计）由碳组成。X射线衍射鉴定出石墨，碳化硅和碳酸盐的结晶相。X射线光电子能谱分析表明，碳化物/碳的浓度比从结构外部区域的0.2到硅衬底边界的0.7不等。Mott-Schottky分析显示具有高载流子密度N  > 10 ¹⁶  cm ^-3的结构的p型半导电性。这些表面在400 nm至1100 nm的宽波长区域中吸收了90％以上的白光。所获得的复合材料有望用作抗反射和保护涂层或光电极。