Abstract Ultrathin two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) nanosheets have wide applications in electronic devices. Incorporation of MoS2 nanosheets into poly(vinylidene fluoride) (PVDF) renders a type of dielectric composite regulated with 2D architecture. However, due to the semiconducting behavior of MoS2, the accompanying high dielectric loss prevents the composite being good dielectrics. Aluminum flakes (AFs), another 2D structure in micron scale, were thus introduced into the MoS2/PVDF composite to block leakage path as well as providing another source for electric polarization. The effects of multiscale 2D fillers on adjusting the dielectric and electrical properties of the ternary MoS2/AFs/PVDF composites were investigated systematically. The largely suppressed dielectric loss and electrical conductivity of ternary composite compared with those of MoS2/PVDF composite is ascribed to the parallel arranged self-passivated AFs, which effectively inhibit the direct connection and overlapping of MoS2 nanosheets along the electric field direction. Meanwhile, formation of numerous micro-capacitors with AFs as electrodes and MoS2/PVDF composite as dielectric medium makes an additional contribution to the high dielectric constant of the ternary composite. Furthermore, the dielectric polarization and relaxation process of composites were investigated in terms of electric modulus to explain the variation tendency of dielectric and electric property of the composites.

中文翻译：

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通过多尺度二维填料调制的聚（偏二氟乙烯）基复合材料具有高介电性能

摘要 超薄二维（2D）半导体二硫化钼（MoS2）纳米片在电子器件中有着广泛的应用。将二硫化钼纳米片结合到聚偏二氟乙烯 (PVDF) 中，形成了一种受二维结构调节的介电复合材料。然而，由于二硫化钼的半导体行为，伴随的高介电损耗阻碍了复合材料成为良好的电介质。因此，将另一种微米级二维结构铝片 (AFs) 引入 MoS2/PVDF 复合材料中，以阻止泄漏路径并提供另一种电极化来源。系统地研究了多尺度二维填料对调节三元 MoS2/AFs/PVDF 复合材料介电和电学性能的影响。与MoS2/PVDF复合材料相比，三元复合材料的介电损耗和电导率得到大幅抑制，这归因于平行排列的自钝化AFs，有效抑制了MoS2纳米片沿电场方向的直接连接和重叠。同时，以AFs为电极、MoS2/PVDF复合材料作为电介质形成大量微电容器，对三元复合材料的高介电常数做出了额外的贡献。此外，从电模量的角度研究了复合材料的介电极化和弛豫过程，以解释复合材料介电和电性能的变化趋势。有效地抑制了 MoS2 纳米片沿电场方向的直接连接和重叠。同时，以AFs为电极、MoS2/PVDF复合材料作为电介质形成大量微电容器，对三元复合材料的高介电常数做出了额外的贡献。此外，从电模量的角度研究了复合材料的介电极化和弛豫过程，以解释复合材料介电和电性能的变化趋势。有效地抑制了 MoS2 纳米片沿电场方向的直接连接和重叠。同时，以AFs为电极、MoS2/PVDF复合材料作为电介质形成大量微电容器，对三元复合材料的高介电常数做出了额外的贡献。此外，从电模量的角度研究了复合材料的介电极化和弛豫过程，以解释复合材料介电和电性能的变化趋势。