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ALD-Developed Plasmonic Two-Dimensional Au–WO3–TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-03-06 00:00:00 , DOI: 10.1021/acsami.7b17508 Mohammad Karbalaei Akbari 1 , Zhenyin Hai 1 , Zihan Wei 1 , Christophe Detavernier 2 , Eduardo Solano 2, 3 , Francis Verpoort 1, 4, 5 , Serge Zhuiykov 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-03-06 00:00:00 , DOI: 10.1021/acsami.7b17508 Mohammad Karbalaei Akbari 1 , Zhenyin Hai 1 , Zihan Wei 1 , Christophe Detavernier 2 , Eduardo Solano 2, 3 , Francis Verpoort 1, 4, 5 , Serge Zhuiykov 1
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Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal–semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au–TiO2-based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal–insulator–semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au–WO3–TiO2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au–TiO2 and Au–WO3–TiO2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.
中文翻译：
ALD开发的等离子二维Au–WO 3 –TiO 2异质结建筑学用于光伏器件的设计
得益于表面等离激元激发的热载带的特权，电响应等离激元设备已支持了可见光辅助技术中的引人入胜的应用。可以通过控制电荷转移来调节等离激元器件的特性。可以通过有意设计金属-半导体（MS）接口来实现。在这项研究中，使用原子层沉积（ALD）技术实现了在颗粒状Au金属衬底上二维（2D）TiO 2半导体的晶圆级制造。ALD开发的2D MS异质结显示出光响应性的显着增强，并证明了2D Au–TiO 2的响应时间缩短了可见光照射下的基于等离子体的等离子设备。为了绕过等离子设备中不希望的暗电流，采用2D WO 3纳米膜（〜0.7 nm）作为MS界面上的中间层，以开发金属-绝缘体-半导体（MIS）2D异质结构。结果，对于制造的二维Au–WO 3 –TiO 2异质结，外部量子效率提高了13.4％。阻抗计测量证实了使用MIS建筑电子技术在2D MS接口上对电荷转移的调制。对于Au–TiO 2和Au–WO 3 –TiO 2，观察到了从紫外到可见光区域的宽带光响应性。异质结构，而未观察到近红外响应度。因此，考虑到ALD技术的通用性，这种方法可以促进针对高效等离子设备的新型2D MS和MIS异质结的架构和设计。
更新日期：2018-03-06
中文翻译：
ALD开发的等离子二维Au–WO 3 –TiO 2异质结建筑学用于光伏器件的设计
得益于表面等离激元激发的热载带的特权，电响应等离激元设备已支持了可见光辅助技术中的引人入胜的应用。可以通过控制电荷转移来调节等离激元器件的特性。可以通过有意设计金属-半导体（MS）接口来实现。在这项研究中，使用原子层沉积（ALD）技术实现了在颗粒状Au金属衬底上二维（2D）TiO 2半导体的晶圆级制造。ALD开发的2D MS异质结显示出光响应性的显着增强，并证明了2D Au–TiO 2的响应时间缩短了可见光照射下的基于等离子体的等离子设备。为了绕过等离子设备中不希望的暗电流，采用2D WO 3纳米膜（〜0.7 nm）作为MS界面上的中间层，以开发金属-绝缘体-半导体（MIS）2D异质结构。结果，对于制造的二维Au–WO 3 –TiO 2异质结，外部量子效率提高了13.4％。阻抗计测量证实了使用MIS建筑电子技术在2D MS接口上对电荷转移的调制。对于Au–TiO 2和Au–WO 3 –TiO 2，观察到了从紫外到可见光区域的宽带光响应性。异质结构，而未观察到近红外响应度。因此，考虑到ALD技术的通用性，这种方法可以促进针对高效等离子设备的新型2D MS和MIS异质结的架构和设计。
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