Abstract Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

中文翻译：

---

条纹图案的 Ir/HPHT-金刚石基板上金刚石膜的横向过度生长

摘要 微波等离子体CVD系统在图案化的Ir/(0 0 1)HPHT-金刚石衬底上进行了金刚石薄膜的外延横向过度生长(ELO)。Ir/(0 0 1)HPHT-金刚石衬底是通过光刻和磁控溅射技术制造的。通过光学显微镜和扫描电子显微镜表征生长的 ELO 金刚石膜的形态。通过表面蚀刻坑密度和微拉曼光谱研究了 ELO 金刚石薄膜的质量和应力。在同一衬底上制备的ELO金刚石区和非ELO金刚石区制作了两个紫外光电探测器，其中一个在ELO金刚石区具有更好的光电性能。所有结果都表明 ELO 金刚石薄膜的质量有所提高。