Abstract Junction-driven photovoltaic effects in lead-free perovskite BiFeO3 multiferroic materials have demonstrated promising applications in energy harvesting and optical sensors. This study highlights remarkable photon-to-electron external quantum efficiency (EQE) of ∼9% and light-to-electric power-conversion efficiency (PCE) of ∼0.8% in the heterostructure consisting of A-site neodymium-doped BiFeO3 ceramic and indium-tin-oxide (ITO) thin film under irradiation of wavelength λ = 405 nm. A theoretical p-n-junction model based on the photo-generated carriers was employed to quantitatively describe open-circuit voltage (Voc) and short-circuit current density (Jsc) as functions of irradiation intensity, and to calculate junction widths and carrier densities. The direct band gap and the degree of local disorder (or defect state) were estimated using the photon-energy-dependent optical attenuation coefficient with the Tauc and Urbach relations.

中文翻译：

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钙钛矿多铁陶瓷中的光伏转换和量子效率

摘要 无铅钙钛矿 BiFeO3 多铁性材料中的结驱动光伏效应已在能量收集和光学传感器中显示出有前景的应用。这项研究突出了由 A 位掺钕 BiFeO3 陶瓷和 A 位掺杂的 BiFeO3 陶瓷组成的异质结构中约 9% 的显着光子到电子外部量子效率 (EQE) 和约 0.8% 的光到电功率转换效率 (PCE)。氧化铟锡 (ITO) 薄膜在波长 λ = 405 nm 的照射下。基于光生载流子的理论 pn 结模型被用来定量描述作为辐照强度函数的开路电压 (Voc) 和短路电流密度 (Jsc)，并计算结宽度和载流子密度。