Abstract The rediscovery of graphene in 2004 triggered an explosive expansion of research on various van der Waals (vdW) materials. The atomic layers of these vdW materials do not have surface crystal defects and are bonded by weak vdW interactions, thus the vdW materials can be stacked onto each other to form vdW heterojunction structures without needing to consider the lattice mismatch issue. In addition, the broad library of vdW materials makes it possible to design diverse types of heterojunctions with a wide range of band alignments, bandgaps, and electron affinities. Vertical vdW heterostructures especially offer numerous possibilities for the realization of high-performance electronic and optoelectronic devices. Therefore, these vdW heterostructures have received significant attention, and extensive relevant experimental results have been reported in the past few years. In this review, we first introduce the transfer techniques to form vdW heterojunction structures. Next, we discuss recent progress in vdW heterostructure-based electronic and optoelectronic devices, including vertical field effect transistors, negative differential resistance devices, memories, photodetectors, photovoltaic devices, and light-emitting diodes. Finally, we conclude this review by discussing the current challenges facing vdW heterojunction structure-based devices and our perspective on future research directions.

中文翻译：

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基于范德华 (vdW) 异质结的电子和光电器件的最新进展

摘要 2004 年石墨烯的重新发现引发了对各种范德华 (vdW) 材料研究的爆炸性扩展。这些vdW材料的原子层没有表面晶体缺陷，通过弱vdW相互作用键合，因此vdW材料可以相互堆叠形成vdW异质结结构，而无需考虑晶格失配问题。此外，广泛的 vdW 材料库使得设计具有广泛能带排列、带隙和电子亲和力的各种异质结成为可能。垂直 vdW 异质结构尤其为实现高性能电子和光电器件提供了多种可能性。因此，这些 vdW 异质结构受到了极大的关注，并在过去几年中报道了大量的相关实验结果。在这篇综述中，我们首先介绍了形成 vdW 异质结结构的转移技术。接下来，我们将讨论基于 vdW 异质结构的电子和光电器件的最新进展，包括垂直场效应晶体管、负差分电阻器件、存储器、光电探测器、光伏器件和发光二极管。最后，我们通过讨论基于 vdW 异质结结构的器件当前面临的挑战以及我们对未来研究方向的看法来结束本综述。包括垂直场效应晶体管、负差分电阻器件、存储器、光电探测器、光伏器件和发光二极管。最后，我们通过讨论基于 vdW 异质结结构的器件当前面临的挑战以及我们对未来研究方向的看法来结束本综述。包括垂直场效应晶体管、负差分电阻器件、存储器、光电探测器、光伏器件和发光二极管。最后，我们通过讨论基于 vdW 异质结结构的器件当前面临的挑战以及我们对未来研究方向的看法来结束本综述。