Abstract The band-edge emission properties from a homoepitaxial chemical vapor deposition single-crystal diamond have been studied in detail through photoluminescence (PL) measurement from room temperature down to 8 K. In particular, we firstly observed the third phonon replica of the intrinsic emission at 5.277 eV and the second phonon replica of the intrinsic emission at 5.330 eV in the PL spectra, indicating the high crystallinity of our diamond sample. The main optical characteristics of intrinsic recombination radiation for single crystal diamond at low temperatures have been reported and its light emission mechanism has been discussed in this paper.

中文翻译：

---

优质单晶金刚石带边发射特性及机理研究

摘要 通过从室温到 8 K 的光致发光 (PL) 测量，我们详细研究了同质外延化学气相沉积单晶金刚石的带边发射特性。特别是，我们首先观察到本征发射的第三个声子复制品。在 5.277 eV 和 PL 光谱中 5.330 eV 的本征发射的第二个声子复制品，表明我们的金刚石样品的高结晶度。本文报道了单晶金刚石在低温下本征复合辐射的主要光学特性，并讨论了其发光机理。