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Scrutinizing Defects and Defect Density of Selenium‐Doped Graphene for High‐Efficiency Triiodide Reduction in Dye‐Sensitized Solar Cells
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2018-03-15 , DOI: 10.1002/anie.201801337 Xiangtong Meng 1, 2 , Chang Yu 1 , Xuedan Song 1 , James Iocozzia 2 , Jiafu Hong 1 , Matthew Rager 2 , Huile Jin 3 , Shun Wang 3 , Longlong Huang 1 , Jieshan Qiu 1 , Zhiqun Lin 2
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2018-03-15 , DOI: 10.1002/anie.201801337 Xiangtong Meng 1, 2 , Chang Yu 1 , Xuedan Song 1 , James Iocozzia 2 , Jiafu Hong 1 , Matthew Rager 2 , Huile Jin 3 , Shun Wang 3 , Longlong Huang 1 , Jieshan Qiu 1 , Zhiqun Lin 2
Affiliation
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Understanding the impact of the defects/defect density of electrocatalysts on the activity in the triiodide (I3−) reduction reaction of dye‐sensitized solar cells (DSSCs) is indispensable for the design and construction of high‐efficiency counter electrodes (CEs). Active‐site‐enriched selenium‐doped graphene (SeG) was crafted by ball‐milling followed by high‐temperature annealing to yield abundant edge sites and fully activated basal planes. The density of defects within SeG can be tuned by adjusting the annealing temperature. The sample synthesized at an annealing temperature of 900 °C exhibited a superior response to the I3− reduction with a high conversion efficiency of 8.42 %, outperforming the Pt reference (7.88 %). Improved stability is also observed. DFT calculations showed the high catalytic activity of SeG over pure graphene is a result of the reduced ionization energy owing to incorporation of Se species, facilitating electron transfer at the electrode–electrolyte interface.
中文翻译：
仔细研究硒掺杂石墨烯的缺陷和缺陷密度，以实现染料敏化太阳能电池中三碘化物的高效还原
理解，在三碘化物活性电催化剂的缺陷/缺陷密度的影响（I 3 - ）的染料敏化太阳能电池（DSSC）的还原反应是高效率的对置电极（CES）的设计和构造是必不可少的。富集活性位的硒掺杂石墨烯（SeG）是通过球磨，高温退火制成的，以产生大量的边缘位点和完全活化的基面。SeG中缺陷的密度可以通过调整退火温度来调整。在900℃的退火温度中合成的样品表现出与I优异的响应3 -还原效率高达8.42％，优于Pt参考值（7.88％）。还观察到改进的稳定性。DFT计算表明，SeG相对于纯石墨烯具有较高的催化活性，这是由于掺入Se物种而降低了电离能的结果，从而促进了电极与电解质界面的电子转移。
更新日期：2018-03-15
中文翻译：
仔细研究硒掺杂石墨烯的缺陷和缺陷密度，以实现染料敏化太阳能电池中三碘化物的高效还原
理解，在三碘化物活性电催化剂的缺陷/缺陷密度的影响（I 3 - ）的染料敏化太阳能电池（DSSC）的还原反应是高效率的对置电极（CES）的设计和构造是必不可少的。富集活性位的硒掺杂石墨烯（SeG）是通过球磨，高温退火制成的，以产生大量的边缘位点和完全活化的基面。SeG中缺陷的密度可以通过调整退火温度来调整。在900℃的退火温度中合成的样品表现出与I优异的响应3 -还原效率高达8.42％，优于Pt参考值（7.88％）。还观察到改进的稳定性。DFT计算表明，SeG相对于纯石墨烯具有较高的催化活性，这是由于掺入Se物种而降低了电离能的结果，从而促进了电极与电解质界面的电子转移。
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