Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge₂Sb₂Te₅) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition–diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition–diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

中文翻译：

---

超级非线性电沉积–扩散控制的薄膜选择器

具有高非线性度的选择器元素是构建高密度，大规模，3D可堆叠新兴非易失性存储器和神经形态网络的必不可少的部分。尽管已经致力于开发新颖的薄膜选择器，但是在满足选择器中良好的开关性能以满足各种存储元件的严格电气标准方面仍然是巨大的挑战。在这项工作中，我们利用了高缺陷密度的硫族化物玻璃（Ge ₂ Sb ₂ Te ₅）与高迁移率的Ag元素（Ag-GST）结合使用，以实现超非线性选择性开关。一种基于Ag-GST的新型电沉积扩散动态选择器具有出色的选择性能，包括出色的非线性（<5 mV / dev），超低漏电（<10 fA）和双向操作。借助可靠的微观结构证据和动态分析，我们将选择性开关归因于电场下玻璃态GST基质中Ag原子在电沉积和扩散之间的竞争。提出了一种开关模型，对选择性开关机制的深入了解为电沉积-扩散控制的薄膜选择器的开关动力学提供了见识。