Platinum diselenide (PtSe₂) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. It has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe₂ can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness-dependent transport properties and investigate electrical contacts to PtSe₂, a crucial and universal element of TMD-based electronic devices. PtSe₂ films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe₂ film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe₂ has been indirectly verified by electrical characterization in field-effect devices. Finally, the influence of edge contacts at the metal–PtSe₂ interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps toward realizing high-performance nanoelectronic devices based on group-10 TMDs.

二硒化铂（PtSe ₂）是二维（2D）过渡金属二卤化二硫化碳（TMD）系列的令人兴奋的新成员。当接近单层厚度时，它具有从半金属到半导体的过渡，并且已经显示出在器件应用中的巨大潜力。值得注意的是，PtSe ₂可以在低温下生长，使其有可能适合工业用途。在这里，我们研究厚度依赖的传输特性，并研究与PtSe _2的电接触，PtSe ₂是基于TMD的电子设备的关键和通用元素。铂硒₂薄膜已合成为各种厚度，并经过结构化以允许接触工程和电性能的准确提取。对于不同的接触金属和不同的PtSe ₂膜厚度，比较了从传输线方法（TLM）测量中提取的接触电阻率和薄层电阻。此外，PtSe _2中从半金属到半导体的过渡已经通过场效应器件中的电特性间接验证。最后，边缘接触在金属-PtSe _{2上的影响}已经通过使用电子束光刻纳米结构化接触区域来研究界面。通过增加边缘接触长度，与具有传统顶部接触的器件相比，接触电阻率提高了多达70％。本文介绍的结果代表了实现基于第10组TMD的高性能纳米电子器件的关键步骤。