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Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-02-27 00:00:00 , DOI: 10.1039/c7tc05769e
Hongjun Xu,Ming-Chien Hsu,Huei-Ru Fuh,Jiafeng Feng,Xiufeng Han,Yanfeng Zhao,Duan Zhang,Xinming Wang,Fang Liu,Huajun Liu,Jiung Cho,Miri Choi,Byong Sun Chun,Cormac Ó Coileáin,Zhi Wang,Mansoor B. A. Jalil,Han-Chun Wu,Ching-Ray Chang

Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS2. A large negative and quadratic MR of −10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, Bc, and the MR shows a plateau of near zero MR. When B < Bc, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.

中文翻译:

各向异性磁性2D过渡金属二卤化金属的阈值磁阻

最近,从二维(2D)材料的研究中已经报道了许多新颖的磁阻(MR)现象。在这里,我们报告了VS 2的奇异传输行为。对于不超过14 T的平面内磁场B,观察到较大的负-10%MR和二次方MR 。值得注意的是,当外加磁场偏离面内取向时,会有一个阈值磁场B c,并且MR示出了接近零MR的平稳段。当B < B c时,仅存在单个状态,并且量子自旋状态之间的跃迁被禁止。我们的工作为具有局部状态的磁性2D材料的MR提供了新的思路,并可能推动进一步的研究。
更新日期:2018-02-27
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