Abstract High-performance electronics require long carrier lifetimes within their silicon crystals. This paper reports the effects of thermal donors on the lifetimes of carriers in as-grown n-type silicon crystals grown by the Czochralski method. We grew silicon crystals with two different concentrations of thermal donors using the following two cooling processes: one was cooled with a 4-h halt after detaching the crystal from the melt, and the other was cooled continuously. The crystal grown with the cooling halt contained higher concentrations of thermal donors of the order of 1 × 1013 cm−3, while the crystal without the halt had no thermal donors. The measured bulk lifetimes were in the range of 15–18 ms. We concluded that thermal donors in Czochralski-grown silicon crystals do not act to reduce their lifetimes.

中文翻译：

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热供体是否会缩短直拉生长的硅晶体的寿命？

摘要 高性能电子器件需要在其硅晶体内具有较长的载流子寿命。本文报告了热施主对通过直拉法生长的 n 型硅晶体中载流子寿命的影响。我们使用以下两种冷却过程用两种不同浓度的热供体生长硅晶体：一种是在将晶体从熔体中分离后暂停 4 小时进行冷却，另一种是连续冷却。冷却停止生长的晶体含有较高浓度的热供体，数量级为 1 × 1013 cm-3，而没有停止冷却的晶体没有热供体。测量的体寿命在 15-18 ms 的范围内。我们得出结论，直拉生长的硅晶体中的热供体不会减少它们的寿命。