Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C₆₀ and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ₁ between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ₁ may provide alternative strategies to optimize the electronic properties of organic semiconductors.

掺杂在半导体物理学中起着至关重要的作用，n掺杂由杂质相对于导带边缘的电离能控制。在有机半导体中，有效掺杂受目前尚不十分了解的各种影响所支配。在这里，我们用正向和反向光发射光谱法进行模拟和实验测量，以n型掺杂高效苯并咪唑啉自由基（2-Cyc-DMBI）的原型材料C ₆₀和酞菁锌的状态密度和费米能级位置进行测量。我们研究掺杂引起的隙态的作用，而且，特别是差别Δ ₁在未掺杂材料的电子亲和力与其掺杂对应物的电离电势之间。我们表明该参数对于自由载流子的产生至关重要，并影响掺杂膜的电导率。的调谐Δ ₁可以提供替代策略来优化有机半导体的电子特性。