Nitrides represent an intriguing class of functional materials with a broad range of application fields. Within the past decade, the ammonothermal method became increasingly attractive for the synthesis and crystal growth of nitride materials. The ammonothermal approach proved to be eminently suitable for the growth of bulk III‐nitride semiconductors like GaN, and furthermore provided access to numerous ternary and multinary nitrides and oxonitrides with promising optical and electronic properties. In this minireview, we will shed light on the latest research findings covering the synthesis of nitrides by this method. An overview of synthesis strategies for binary, ternary, and multinary nitrides and oxonitrides, as well as their properties and potential applications will be given. The recent development of autoclave technologies for syntheses at high temperatures and pressures, in situ methods for investigations of crystallization processes, and solubility measurements by ultrasonic velocity experiments is briefly reviewed as well. In conclusion, challenges and future perspectives regarding the synthesis and crystal growth of novel nitrides, as well as the advancement of autoclave techniques are discussed.

中文翻译：

---

氮化物的氨热合成：最新进展和未来展望

氮化物是一类引人入胜的功能材料，具有广泛的应用领域。在过去的十年中，氨热法对氮化物材料的合成和晶体生长越来越有吸引力。事实证明，氨热方法非常适合生长块状III氮化物半导体（如GaN），并且还提供了具有光和电子特性的大量三元和多元氮化物和氧氮化物的使用途径。在本小型审查中，我们将阐明有关通过这种方法合成氮化物的最新研究结果。将概述二元，三元和多元氮化物和氧氮化物的合成策略，及其性质和潜在应用。还简要回顾了高温高压下高压釜技术的最新发展，用于研究结晶过程的原位方法以及通过超声速度实验进行的溶解度测量。总之，讨论了关于新型氮化物的合成和晶体生长以及高压釜技术的发展所面临的挑战和未来展望。