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A Delamination Strategy for Thinly Layered Defect‐Free High‐Mobility Black Phosphorus Flakes
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2018-03-15 , DOI: 10.1002/anie.201801265 Sheng Yang 1, 2 , Ke Zhang 2 , Antonio Gaetano Ricciardulli 2 , Panpan Zhang 1 , Zhongquan Liao 3 , Martin R. Lohe 1 , Ehrenfried Zschech 3 , Paul W. M. Blom 2 , Wojciech Pisula 2, 4 , Klaus Müllen 2 , Xinliang Feng 1
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2018-03-15 , DOI: 10.1002/anie.201801265 Sheng Yang 1, 2 , Ke Zhang 2 , Antonio Gaetano Ricciardulli 2 , Panpan Zhang 1 , Zhongquan Liao 3 , Martin R. Lohe 1 , Ehrenfried Zschech 3 , Paul W. M. Blom 2 , Wojciech Pisula 2, 4 , Klaus Müllen 2 , Xinliang Feng 1
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Extraordinary electronic and photonic features render black phosphorus (BP) an important material for the development of novel electronics and optoelectronics. Despite recent progress in the preparation of thinly layered BP flakes, scalable synthesis of large‐size, pristine BP flakes remains a major challenge. An electrochemical delamination strategy is demonstrated that involves intercalation of diverse cations in non‐aqueous electrolytes, thereby peeling off bulk BP crystals into defect‐free flakes comprising only a few layers. The interplay between tetra‐n‐butylammonium cations and bisulfate anions promotes a high exfoliation yield up to 78 % and large BP flakes up to 20.6 μm. Bottom‐gate and bottom‐contact field‐effect transistors, comprising single BP flakes only a few layers thick, exhibit a high hole mobility of 252±18 cm2 V−1 s−1 and a remarkable on/off ratio of (1.2±0.15)×105 at 143 K under vacuum. This efficient and scalable delamination method holds great promise for development of BP‐based composites and optoelectronic devices.
中文翻译：
薄层无缺陷高迁移率黑磷薄片的分层策略
非凡的电子和光子特性使黑磷（BP）成为开发新型电子学和光电子学的重要材料。尽管最近在制备薄层BP薄片方面取得了进展，但大尺寸，原始BP薄片的可扩展合成仍然是一项重大挑战。演示了一种电化学分层策略，该策略涉及在非水电解质中插入各种阳离子，从而将大块BP晶体剥离为仅包含几层的无缺陷薄片。四之间的相互作用ñ叔丁基铵阳离子和硫酸氢根阴离子可促进高达78％的高剥离率，而大的BP薄片可达20.6μm。底栅和底接触场效应晶体管仅由几层厚的BP片组成，具有252±18 cm 2 V -1 s -1的高空穴迁移率，导通/截止比为（1.2±真空下在143 K下为0.15）×10 5。这种高效且可扩展的分层方法对于开发基于BP的复合材料和光电器件具有广阔的前景。
更新日期：2018-03-15
中文翻译：
薄层无缺陷高迁移率黑磷薄片的分层策略
非凡的电子和光子特性使黑磷（BP）成为开发新型电子学和光电子学的重要材料。尽管最近在制备薄层BP薄片方面取得了进展，但大尺寸，原始BP薄片的可扩展合成仍然是一项重大挑战。演示了一种电化学分层策略，该策略涉及在非水电解质中插入各种阳离子，从而将大块BP晶体剥离为仅包含几层的无缺陷薄片。四之间的相互作用ñ叔丁基铵阳离子和硫酸氢根阴离子可促进高达78％的高剥离率，而大的BP薄片可达20.6μm。底栅和底接触场效应晶体管仅由几层厚的BP片组成，具有252±18 cm 2 V -1 s -1的高空穴迁移率，导通/截止比为（1.2±真空下在143 K下为0.15）×10 5。这种高效且可扩展的分层方法对于开发基于BP的复合材料和光电器件具有广阔的前景。
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