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Microstructure investigations of U3Si2 implanted by high-energy Xe ions at 600 °C
Journal of Nuclear Materials ( IF 2.8 ) Pub Date : 2018-02-24 , DOI: 10.1016/j.jnucmat.2018.02.031
Yinbin Miao , Jason Harp , Kun Mo , Yeon Soo Kim , Shaofei Zhu , Abdellatif M. Yacout

The microstructure investigations on a high-energy Xe-implanted U3Si2 pellet were performed. The promising accident tolerant fuel (ATF) candidate, U3Si2, was irradiated by 84 MeV Xe ions at 600 °C at Argonne Tandem Linac Accelerator System (ATLAS). The characterizations of the Xe implanted sample were conducted using advanced transmission electron microscopy (TEM) techniques. An oxidation layer was observed on the sample surface after irradiation under the 10-5 Pa vacuum. The study on the oxidation layer not only unveils the readily oxidation behavior of U3Si2 under high-temperature irradiation conditions, but also develops an understanding of its oxidation mechanism. Intragranular Xe bubbles with bimodal size distribution were observed within the Xe deposition region of the sample induced by 84 MeV Xe ion implantation. At the irradiation temperature of 600 °C, the gaseous swelling strain contributed by intragranular bubbles was found to be insignificant, indicating an acceptable fission gas behavior of U3Si2 as a light water reactor (LWR) fuel operating at such a temperature.



中文翻译:

高能Xe离子在600°C注入U 3 Si 2的显微组织研究

对高能氙气注入的U 3 Si 2球团进行了微观结构研究。在Argonne Tandem Linac加速器系统(ATLAS)上,在600°C下用84 MeV Xe离子辐照了有希望的耐事故燃料(ATF)候选物U 3 Si 2。使用先进的透射电子显微镜(TEM)技术对Xe植入的样品进行表征。紫外光照射后样品表面观察到氧化层。10 -5  Pa真空度。对氧化层的研究不仅揭示了U 3 Si 2在高温辐照条件下的易氧化行为,而且使人们对U 3 Si 2的氧化机理有了更深入的了解。在84 MeV Xe离子注入诱导的样品Xe沉积区域内观察到具有双峰尺寸分布的颗粒内Xe气泡。在600℃的照射温度下,发现由晶粒内气泡引起的气态膨胀应变是微不足道的,表明作为在这种温度下运行的轻水反应堆(LWR)燃料的U 3 Si 2的裂变气体行为是可接受的。

更新日期:2018-02-24
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