Two high voltage gain quasi-switched boost inverters (HG-qSBIs) are introduced in this paper. The proposed HG-qSBIs has the following characteristics: 1) continuous input current with low ripple; 2) reduced voltage stress on the capacitor, switch, and diodes; 3) shoot-through immunity; 4) achieved high voltage gain with single-stage conversion; and 5) improve the output voltage capability with using high modulation index. A novel pulse-width modulationcontrol technique is proposed for the introduced HG-qSBI. Operating principle, circuit analysis, and passive component design guideline of the HG-qSBI are addressed. Comparison analysis between the introduced HG-qSBI and other Z-source-based high voltage gain inverters is presented. A prototype is made to test the introduced HG-qSBI. Simulation and experimental verifications are shown to prove the accuracy of the theoretical analysis.

中文翻译：

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具有低输入电流纹波的高电压增益准开关升压逆变器


本文介绍了两种高电压增益准开关升压逆变器（HG-qSBI）。所提出的 HG-qSBI 具有以下特点：1）连续输入电流低纹波； 2）降低电容器、开关和二极管上的电压应力； 3) 击穿抗扰度； 4）通过单级转换实现高电压增益； 5)利用高调制指数提高输出电压能力。为引入的 HG-qSBI 提出了一种新颖的脉宽调制控制技术。讨论了 HG-qSBI 的工作原理、电路分析和无源元件设计指南。对所推出的HG-qSBI与其他基于Z源的高电压增益逆变器进行了比较分析。制作了原型来测试引入的 HG-qSBI。仿真和实验验证证明了理论分析的准确性。