The paper demonstrated that the reason of SERS on dielectrics and semiconductors is the enhancement of the electric field in the regions of the tops of the surface roughness with a very large positive curvature. The enhancement in many ways depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. The theoretical result points out that on dielectrics and semiconductors it is weaker than on metals. Experimentally it is demonstrated that there are forbidden lines on hydroquinone, adsorbed on TiO₂$\text{Ti}{\text{O}}_{\text{2}}$, which indicate on the existence of strong quadrupole light-molecule interaction in such systems.

中文翻译：

---

SERS在半导体和电介质上的主要规律

本文证明，在电介质和半导体上存在SERS的原因是，在具有非常大的正曲率的表面粗糙度顶部区域中，电场的增强。增强在许多方面取决于基底的介电常数，并且对于较大的介电常数更强。理论结果指出，在电介质和半导体上，它比在金属上弱。实验证明，对苯二酚上有禁线吸附在TiO _2上$\text{钛}{\text{Ø}}_{\text{2个}}$，这表明在此类系统中存在强四极光分子相互作用。