The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm−2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

中文翻译：

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1.5 MeV 电子辐照对 β-Ga2O3 载流子寿命和扩散长度的影响

对于高达 1.43 × 1016 cm-2 的注量，观察到 1.5 MeV 电子辐射对 Si 掺杂的 β-Ga2O3 垂直肖特基整流器的少数输运特性的影响。电子束感应电流技术用于确定少数空穴扩散长度作为每个辐射剂量的温度函数。这揭示了与 40.9 meV 的浅供体和能量为 18.1 和 13.6 meV 的辐射诱导缺陷相关的活化能。时间分辨阴极发光测量显示超快的 210 ps 衰减寿命和载流子寿命随着辐照增加而减少。