Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure,Applied Physics Letters

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Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure
Applied Physics Letters ( IF 3.5 ) Pub Date : 2018-02-19 , DOI: 10.1063/1.5018636
Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, Jiun-Yun Li

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K–300 K. At low temperatures (T 45 K, the current saturation and negative trans...

中文翻译：

未掺杂 Si/SiGe 异质结构中二维电子气 DC 传输特性的温度依赖性

我们研究了未掺杂 Si/SiGe 异质结构中二维电子气 (2DEG) 的直流特性及其温度依赖性。制造了一个绝缘栅场效应晶体管，并在 4 K–300 K 下测量了传输特性。在低温下（T 45 K，电流饱和和负传输...

更新日期：2018-02-19

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