Defect‐Induced Gas Adsorption on Graphene Transistors,Advanced Materials Interfaces

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Defect‐Induced Gas Adsorption on Graphene Transistors
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-02-22 , DOI: 10.1002/admi.201701640
Yumeng Liu ₁ , Huiliang Liu _{1,

2} , Yao Chu _{1,

2} , Yong Cui _{1,

3} , Takeshi Hayasaka ₁ , Vaishno Dasaka ₄ , Luu Nguyen ₅ , Liwei Lin _{1,

2}

Affiliation

Understanding the influences of defect states on gas adsorption on graphene is at the heart of developing graphene based gas sensors for practical applications. However, it has been challenging to experimentally discriminate the gas adsorptions induced by the defects on graphene, especially the charged impurities commonly found on the transferred graphene samples. Here, using a graphene transistor biased with the quasistatic gate voltage, this study experimentally measures the charge density and the scattering strength of the gas adsorbents on graphene and directly resolves the defect‐induced versus intrinsic gas adsorption processes on graphene for the first time. Furthermore, the elimination and the tuning of the defect‐induced gas adsorptions on graphene are also demonstrated via the chemical compensation process and the gate voltage technique, respectively. These findings provide critical experimental proofs and a versatile platform for understanding and manipulating the defect‐gas interactions on graphene, and could advance the developments of defect‐free and label‐free gas sensing applications using graphene transistors.

中文翻译：

石墨烯晶体管上的缺陷诱导气体吸附

了解缺陷状态对石墨烯上气体吸附的影响是开发基于石墨烯的气体传感器以实际应用的核心。然而，在实验上区分由石墨烯上的缺陷引起的气体吸附是一项挑战，特别是在转移的石墨烯样品上通常发现的带电杂质。在这里，通过使用准静态栅极电压偏置的石墨烯晶体管，本研究实验性地测量了石墨烯上气体吸附剂的电荷密度和散射强度，并首次直接解决了由缺陷引起的与固有气体对石墨烯的吸附过程。此外，还通过化学补偿过程和栅极电压技术证明了消除和调整缺陷诱发的气体在石墨烯上的吸附的能力，分别。这些发现提供了关键的实验证据和一个通用的平台，用于理解和操纵石墨烯上的缺陷气体相互作用，并可能推动使用石墨烯晶体管的无缺陷和无标签气体传感应用的发展。

更新日期：2018-02-22

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