Abstract Multistate resistive switching device was demonstrated with organic/inorganic nanocomposite layer of polyvinylphenol (PVP) embedded with zinc oxide nanoparticles (ZnO NPs). Both cap (ITO/ZnO NPs + PVP/Al) and crossbar (Pt/ZnO NPs + PVP/Al) device formats were examined, respectively. Extending range of voltage sweep could show adaptive memory effect, which could roughly emulate analog resistive switching device. In addition, potentiation and depression behaviors were also examined with 50 time consecutive pulsed bias (+2.0 V and −2.0 V respectively) having 10 ms width measured at read voltage of −0.2 V. A new possibility of analog resistive switching can be further pursued with the ZnO NPs + PVP nanocomposite.

中文翻译：

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ZnO纳米颗粒嵌入聚乙烯苯酚器件的多态电阻开关特性

摘要 用嵌入氧化锌纳米颗粒 (ZnO NPs) 的聚乙烯苯酚 (PVP) 有机/无机纳米复合层展示了多态电阻开关器件。分别检查了帽（ITO/ZnO NPs + PVP/Al）和横杆（Pt/ZnO NPs + PVP/Al）器件格式。扩大电压扫描范围可以表现出自适应记忆效应，可以大致模拟模拟电阻开关器件。此外，还使用 ​​50 次连续脉冲偏压（分别为 +2.0 V 和 -2.0 V）检查了增强和抑制行为，在 -0.2 V 的读取电压下测量了 10 ms 的宽度。可以进一步探索模拟电阻开关的新可能性ZnO NPs + PVP 纳米复合材料。