The recent rapid increase in efficiency of organic–inorganic perovskite solar cells (PSCs) has resulted in a need to develop a clear understanding of their stability and working mechanisms. In particular, it has been suggested that ion migration contributes to the commonly observed hysteresis in the current–voltage measurements of PSCs, but the rate of ion migration and its effects on the electronic properties of PSCs remain to be addressed. In this work, electron‐beam‐induced current (EBIC) is used to directly map changes in local current extraction in organic–inorganic PSCs under applied voltage. By combining EBIC mapping, standard current–voltage measurements, and external quantum efficiency measurements, it is shown that between the two potential roles that point defects play in device enhancement under voltage biasing, the effects caused by defect‐mediated ion migration outweigh the effects from the filling of trap states caused by these defects. Evidence is also provided for ion migration preferentially at local features such as extended defects. The measured timescale of tens of seconds for migration across a full device imply that ion migration contributes indirectly to the electronic capacitance of perovskite devices through interface charging.

中文翻译：

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偏压对钙钛矿太阳能电池电流提取的影响

最近，有机-无机钙钛矿太阳能电池（PSC）的效率迅速提高，因此需要对它们的稳定性和工作机制有一个清晰的认识。特别是，有人提出离子迁移会引起PSC电流-电压测量中通常观察到的滞后现象，但是离子迁移的速率及其对PSC的电子性能的影响仍有待解决。在这项工作中，电子束感应电流（EBIC）用于直接绘制施加电压下有机-无机PSC中局部电流提取的变化。通过结合EBIC映射，标准电流-电压测量和外部量子效率测量，结果表明，在电压偏置下，点缺陷在器件增强中扮演的两个潜在角色之间，由缺陷介导的离子迁移引起的影响大于由这些缺陷引起的陷阱状态填充所带来的影响。还提供了离子迁移优先在局部特征（如扩展缺陷）处提供的证据。在整个设备上迁移所需的数十秒的时间刻度表明，离子迁移通过界面充电间接影响了钙钛矿设备的电子电容。