Unassisted Water Splitting Using a GaSbxP(1−x) Photoanode,Advanced Energy Materials

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Unassisted Water Splitting Using a GaSbxP(1−x) Photoanode
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2018-02-21 , DOI: 10.1002/aenm.201703247
Alejandro Martinez-Garcia ₁ , Harry B. Russell ₁ , William Paxton ₂ , Srikanth Ravipati ₂ , Sonia Calero-Barney ₁ , Madhu Menon ₃ , Ernst Richter ₄ , James Young ₅ , Todd Deutsch ₅ , Mahendra K. Sunkara _{1,

2}

Affiliation

Here, unbiased water splitting with 2% solar‐to‐hydrogen efficiency under AM 1.5 G illumination using new materials based on GaSb_0.03P_0.97 alloy is reported. Freestanding GaSb_xP₁₋_x is grown using halide vapor phase epitaxy. The native conductivity type of the alloy is modified by silicon doping, resulting in an open‐circuit potential (OCP) of 750 mV, photocurrents of 7 mA cm⁻² at 10 sun illumination, and corrosion resistance in an aqueous acidic environment. Alloying GaP with Sb at 3 at% improves the absorption of high‐energy photons above 2.68 eV compared to pure GaP material. Electrochemical Impedance Spectroscopy and illuminated OCP measurements show that the conduction band of GaSb_xP₁₋_x is at −0.55 V versus RHE irrespective of the Sb concentration, while photocurrent spectroscopy indicates that only radiation with photon energies greater than 2.68 eV generate mobile and extractable charges, thus suggesting that the higher‐laying conduction bands in the Γ 1 valley of the alloys are responsible for exciton generation.

中文翻译：

使用GaSbxP（1-x）光电阳极进行无辅助水分解

在这里，报道了使用基于GaSb _0.03 P _0.97合金的新材料在AM 1.5 G光照下以2％的太阳能到氢的效率进行无偏水分解。独立的GaSb _x P _1-_x使用卤化物气相外延生长。合金的固有导电性类型通过硅掺杂进行了修改，导致开路电势（OCP）为750 mV，在10个阳光照射下的光电流为7 mA cm ^-2，并且在水性酸性环境中具有耐腐蚀性。与纯GaP材料相比，使GaP与3at％的Sb合金化可改善2.68 eV以上的高能光子的吸收。电化学阻抗谱和照亮的OCP测量表明GaSb的导带_x P_1-_x与RHE相比为-0.55 V，而与SHE浓度无关，而光电流光谱表明，只有光子能量大于2.68 eV的辐射才产生可移动和可提取的电荷，因此表明Γ中较高的导电带1个合金谷负责激子的产生。

更新日期：2018-02-21

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