The Competitive Halogen Bond in the Molecular Ferroelectric with Large Piezoelectric Response,Journal of the American Chemical Society

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The Competitive Halogen Bond in the Molecular Ferroelectric with Large Piezoelectric Response
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2018-02-21 , DOI: 10.1021/jacs.7b12524
Wei-Qiang Liao _{1,

2} , Yuan-Yuan Tang ₂ , Peng-Fei Li ₂ , Yu-Meng You ₂ , Ren-Gen Xiong _{2,

3}

Affiliation

Molecular piezoelectrics are attracting tremendous interest because of their easy processing, light weight, low acoustical impedance, and mechanical flexibility. However, reports of molecular piezoelectrics with a piezoelectric coefficient d33 comparable to piezoceramics such as barium titanate (BTO, 90-190 pC/N) have been scarce. Here, we present a uniaxial molecular ferroelectric, trimethylchloromethylammonium tribromocadmium(II) (TMCM-CdBr3), in which the halogen bonding might be a possible critical point for the stabilization of one-dimensional (1D) {CdBr3}- chain and further reservation of its ferroelectricity in such organic-inorganic hybrid crystalline systems. It has a large d33 of 139 pC/N, 1 order of magnitude higher than those of most classically uniaxial ferroelectrics such as LiNbO3 (6-16 pC/N) and Rochelle salt (∼7 pC/N), and comparable with those of multiaxial ferroelectrics such as BTO and trimethylbromomethylammonium tribromomanganese(II) (112 pC/N). Moreover, the simple single-crystal growth and easy-to-find polar axis enable it to hold a great potential for applying in the single-crystal form. In light of the strong, specific, and directional halogen-bonding interactions, this work provides possibilities to explore new classes of molecular piezoelectrics and contribute to further developments.

中文翻译：

具有大压电响应的分子铁电体中的竞争性卤素键

分子压电材料因其易于加工、重量轻、低声阻抗和机械柔韧性而引起了极大的兴趣。然而，关于压电系数 d33 与钛酸钡 (BTO, 90-190 pC/N) 等压电陶瓷相当的分子压电的报道很少。在这里，我们提出了一种单轴分子铁电体，三甲基氯甲基铵三溴镉（II）（TMCM-CdBr3），其中卤素键可能是稳定一维（1D）{CdBr3}-链和进一步保留它在这种有机 - 无机杂化晶体系统中的铁电性。它具有 139 pC/N 的大 d33，比大多数经典单轴铁电体（例如 LiNbO3（6-16 pC/N）和罗谢尔盐（~7 pC/N））高 1 个数量级，可与多轴铁电体如 BTO 和三甲基溴甲基铵三溴锰 (II) (112 pC/N) 相媲美。此外，简单的单晶生长和易于找到的极轴使其具有很大的单晶应用潜力。鉴于强、特定和定向的卤素键相互作用，这项工作为探索新型分子压电材料提供了可能性，并有助于进一步发展。

更新日期：2018-02-21

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