Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface,Advanced Functional Materials

当前位置： X-MOL 学术 › Adv. Funct. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-02-21 , DOI: 10.1002/adfm.201705829
Takayuki Matsui _{1,

2} , Yi Li ₁ , Min-Hsiang Mark Hsu _{3,

4} , Clement Merckling ₃ , Rupert F. Oulton ₁ , Lesley F. Cohen ₁ , Stefan A. Maier _{1,

5}

Affiliation

Extracting plasmon‐induced hot carriers over a metal–semiconductor Schottky barrier enables photodetection below the semiconductor bandgap energy. However, interfacial carrier recombination hinders the efficiency and stability of this process, severely limiting its implementation in telecommunication. This study proposes and demonstrates the use of epitaxially grown lattice‐matched SrTiO₃ for interfacial passivation of silicon‐based plasmonic Schottky devices. The devices are activated by an electrical soft‐breakdown of the interfacial SrTiO₃ layer, resulting in reproducible rectified Schottky characteristics. The transition to a low resistance state of the SrTiO₃ layer boosts the extraction efficiency of hot holes upon resonant plasmonic excitation, giving rise to a two orders of magnitude higher photocurrent compared to devices with a native oxide layer. Photoresponse, tunability, and barrier height studies under reverse biases as high as 100 V present superior stability with the incorporation of the SrTiO₃ layer. The investigation paves the way toward plasmon‐induced photodetection for practical applications including those under challenging operating conditions.

中文翻译：

通过SrTiO3钝化界面将高稳定等离子诱导的热空穴转移到硅中

通过在金属半导体肖特基势垒上提取等离激元诱导的热载流子，可以在低于半导体带隙能量的情况下进行光检测。但是，界面载波重组阻碍了该过程的效率和稳定性，严重限制了其在电信领域的实施。这项研究提出并证明了外延生长的晶格匹配SrTiO ₃在硅基等离子体激元肖特基器件的界面钝化中的应用。器件通过界面SrTiO ₃层的电击穿激活，从而产生可再现的整流肖特基特性。SrTiO ₃向低电阻状态的转变在具有共振等离子体激元激发的情况下，该层提高了热空穴的提取效率，与具有天然氧化物层的器件相比，光电流提高了两个数量级。通过掺入SrTiO ₃层，在高达100 V的反向偏压下进行光响应，可调性和势垒高度研究，显示出优异的稳定性。该研究为包括在挑战性工作条件下的实际应用中的等离激元诱导的光检测铺平了道路。

更新日期：2018-02-21

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11