The experimental annealing kinetics of the primary electronic F, F⁺ centers and dimer F₂ centers observed in Al₂O₃ produced under neutron irradiation were carefully analyzed. The developed theory takes into account the interstitial ion diffusion and recombination with immobile F-type and F₂-centers, as well as mutual sequential transformation with temperature of three types of experimentally observed dimer centers which differ by net charges (0, +1, +2) with respect to the host crystalline sites. The relative initial concentrations of three types of F₂ electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

仔细分析了在中子辐照下产生的Al ₂ O _3中观察到的主要电子F，F ⁺中心和二聚体F ₂中心的实验退火动力学。发达的理论考虑了间隙离子扩散和与固定F型和F _2中心的重组，以及随着温度变化的三种类型的实验观察到的二聚体中心随温度的相互顺序变换，它们的净电荷不同（0，+ 1， +2）关于主体晶体位点。三种类型的F ₂的相对初始浓度 获得退火之前的电子缺陷，以及它们的基态之间的能垒以及弛豫能。