Abstract Ta–Si-C films were deposited by DC magnetron co-sputtering using TaC and Si targets in an Ar-discharge atmosphere. Increasing the current of Si target from 0.0 to 0.5 A led to a continuous increase of Si content from 0.0 to 30.8 at%. The effects of Si content on microstructure were systematically investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). At low Si content (≤ 5.6 at%), Si occupied C vacancies to form a solid solution Ta(C, Si). Further increasing the Si content, some Si atoms bonded with C atoms resulting in the formation of amorphous phase (a-C:Si), and the films presented a nanocomposite structure consisting of solid solution Ta(C, Si) surrounded by a-C:Si matrix. At the highest Si content (30.8 at%), the film exhibited finally X-ray amorphous structures. The hardness ( H ) and fracture toughness ( K f ) were observed to initially increase and then decrease as the Si content was increased. At 5.6 at% Si, the film exhibited a maximum in H (44.9 ± 2.7 GPa) and K f (3.61 ± 0.16 MPa m 1/2 ), which can be ascribed to the formation of a solid solution. On further increasing the Si content, an amorphous phase gradually appeared, leading to a decrease in H and K f .

中文翻译：

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掺硅 TaC 薄膜的结构、硬度和韧性演变

摘要 Ta-Si-C 薄膜是通过直流磁控共溅射使用 TaC 和 Si 靶在 Ar 放电气氛中沉积的。将 Si 靶的电流从 0.0 A 增加到 0.5 A 导致 Si 含量从 0.0 at% 持续增加到 30.8 at%。使用 X 射线衍射 (XRD)、X 射线光电子能谱 (XPS) 和透射电子显微镜 (TEM) 系统地研究了 Si 含量对微观结构的影响。在低 Si 含量（≤ 5.6 at%）时，Si 占据 C 空位形成固溶体 Ta(C, Si)。进一步增加Si含量，一些Si原子与C原子结合形成非晶相(aC:Si)，薄膜呈现出由固溶体Ta(C,Si)和aC:Si基体包围的纳米复合结构。在最高的 Si 含量（30.8 at%）下，薄膜最终表现出 X 射线非晶结构。观察到硬度 ( H ) 和断裂韧性 ( K f ) 随着 Si 含量的增加最初增加然后减少。在 5.6 at% Si 时，薄膜表现出最大的 H (44.9 ± 2.7 GPa) 和 K f (3.61 ± 0.16 MPa m 1/2 )，这可以归因于固溶体的形成。随着Si含量的进一步增加，逐渐出现非晶相，导致H和K f 降低。