Abstract Pr-doped SrI 2 (Pr:SrI 2 ) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI 2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI 2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI 2 single crystal, an emission peak originated from the Pr 3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI 2 and Pr:SrI 2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI 2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI 2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

中文翻译：

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Pr掺杂SrI 2 单晶的晶体生长和闪烁特性

摘要 采用卤化物微下拉(H-μ-PD)法生长了不同Pr浓度的Pr掺杂SrI 2 (Pr:SrI 2 )单晶，并研究了其闪烁特性。Pr1%:SrI 2 单晶可以通过H-μ-PD法生长，而Pr2、3和5%:SrI 2 单晶包含一些裂纹和不透明部分。在 Pr1%:SrI 2 单晶的光致发光光谱中，在 435 nm 附近观察到源自 Pr 3+ 离子的发射峰，而未掺杂的 SrI 2 和 Pr:SrI 2 的辐射发光光谱则在 535 nm 附近观察到发射峰单晶。Pr1、2、3和5%:SrI 2 单晶在γ射线照射下的光产额分别为7700、8700、7200和6700光子/MeV。Pr1和2%:SrI 2 单晶在γ射线照射下的衰变时间分别为55.9和35。