Abstract PdS is theoretically proposed to novel topological material with eight-band fermions. Here, PdS 1−δ crystals were successfully grown from KI as solvent by modified flux method. The single crystalline quality and compositional homogeneity of grown PdS 1−δ are characterized by X-ray diffraction and energy dispersion spectroscopy. Temperature dependent electrical transport property of PdS 1−δ demonstrates a semiconductor-like behavior. Analysis of temperature-dependent resistance indicates that there is variable-range-hopping behavior at low temperature. The clear negative MR of PdS 1−δ single crystals is measured at the low temperature (

中文翻译：

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PdS 1-δ 的晶体生长和磁传输行为

摘要 PdS在理论上被提出用于具有八能带费米子的新型拓扑材料。在这里，PdS 1-δ 晶体是通过改良的助熔剂方法以 KI 作为溶剂成功生长的。生长的 PdS 1-δ 的单晶质量和成分均匀性通过 X 射线衍射和能量色散光谱表征。PdS 1-δ 的温度相关电传输特性表现出类似半导体的行为。温度相关电阻的分析表明，在低温下存在可变范围跳跃行为。PdS 1-δ 单晶的明显负 MR 在低温下测量（