GaN as a nanophotonic material has gained much attention in recent years. Using the hybrid GaN/Si platform, we report the electro-optic tuning of guided-mode resonance in a vertically coupled hybrid GaN/Si microring resonator operating in the 1.5 μm window with up to a 6 dB extinction ratio and a 1.5 MHz modulation frequency (test equipment limit). The electro-optic tuning could be optically suppressed by electron-hole-originated screening induced by an ultraviolet excitation at 325 nm. Our work may benefit in externally intervenable optical interconnects for uninterrupted secure photonic networks.

中文翻译：

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垂直耦合混合GaN/Si微环谐振器中的光诱导屏蔽可抑制电光导模谐振调谐

近年来，GaN作为纳米光子材料备受关注。使用混合 GaN/Si 平台，我们报告了垂直耦合混合 GaN/Si 微环谐振器中导模谐振的电光调谐，该谐振器在 1.5 μm 窗口中工作，消光比高达 6 dB，调制频率为 1.5 MHz （测试设备限制）。电光调谐可以通过由 325 nm 的紫外线激发引起的电子空穴产生的屏蔽进行光学抑制。我们的工作可能会受益于用于不间断安全光子网络的外部可干预光互连。