We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10−3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absor...

中文翻译：

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隧道注入亚 290 nm 紫外发光二极管，外量子效率为 2.8%

我们报告了发射 287 nm 的高效隧道注入紫外发光二极管 (UV LED)。深紫外 LED 的性能受到 p 型接触层严重的内部光吸收和由于 p 型传导不良导致的低电注入效率的限制。在这项工作中，采用极化设计的 Al0.65Ga0.35N/In0.2Ga0.8N 隧道结层进行非平衡空穴注入，以取代传统使用的直接 p 型接触。进一步引入反向渐变的 AlGaN 接触层，以实现与顶部 n-AlGaN 层的低电阻接触。这导致了在 1 kA/cm2 下获得的 1.9 × 10−3 Ω cm2 低隧道结电阻的证明。实现了 287 nm 的光发射，晶圆上峰值外部量子效率为 2.8%，壁塞效率为 1.1%。在 1 kA/cm2 下测得的功率密度为 54.4 W/cm2，证实了通过带间隧穿的有效空穴注入。凭借最小化内部吸收的好处...