We report a differential scanning photocapacitance microscopy technique based on the detection of light-induced capacitance changes allowing mapping of metal interconnection line defects in through-silicon-via (TSV) structures used in three-dimensional (3-D) integration technology. Due to the photosensitive silicon depletion capacitance, observation of the photocapacitance response enables non-destructive two-dimensional (2-D) visualization of metallization line ruptures in TSV structures. We demonstrate the application of the proposed method on a TSV chain structure and reveal the location of the open metallization rupture.

中文翻译：

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通过差示扫描光电容显微镜对 3 维硅通孔结构中金属互连线的缺陷定位

我们报告了一种基于光感应电容变化检测的差分扫描光电容显微镜技术，该技术允许映射用于三维 (3-D) 集成技术的硅通孔 (TSV) 结构中的金属互连线缺陷。由于光敏硅耗尽电容，对光电容响应的观察可以实现 TSV 结构中金属化线断裂的非破坏性二维 (2-D) 可视化。我们展示了所提出的方法在 TSV 链结构上的应用，并揭示了开放金属化破裂的位置。