We have demonstrated the epitaxial growth of a β-(Al0.08Ga0.92)2O3 film on a β-Ga2O3 (010) substrate through pulsed laser deposition. The temperature-dependent electrical characteristics of Au/Ni/β-(Al0.08Ga0.92)2O3 Schottky diodes were investigated in the temperature range of 300–573 K, using thermionic emission theory to calculate the Schottky diode parameters. The barrier height ϕb was found to increase, while the ideality factor n and the series resistance Rs were found to decrease with increasing temperatures. The calculated values of ϕb and n varied from 0.81 eV and 2.29 at 300 K to 1.02 eV and 1.65 at 573 K. The temperature-dependent I-V characteristics of the Schottky diode have shown the Gaussian distribution, yielding a mean barrier height of 1.23 eV and a standard deviation of 0.147 V, respectively. A modified Richardson plot of ln(Is/T2)−(q2σs2/2k2T2) versus q/2kT gives ϕb0¯ and A* as 1.24 eV and 44.3 A cm−2 K−2, showing the promise of Ni/β-(AlGa)2O3 as a Schottky diode rectifier.

中文翻译：

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脉冲激光沉积 Au/Ni/β-(AlGa)2O3 肖特基二极管的温度相关电学特性

我们已经证明了通过脉冲激光沉积在 β-Ga2O3 (010) 衬底上外延生长 β-(Al0.08Ga0.92)2O3 薄膜。Au/Ni/β-(Al0.08Ga0.92)2O3 肖特基二极管在 300-573 K 温度范围内随温度变化的电气特性被研究，使用热电子发射理论来计算肖特基二极管参数。发现势垒高度 ϕb 会增加，而理想因子 n 和串联电阻 Rs 会随着温度的升高而降低。φb 和 n 的计算值从 300 K 时的 0.81 eV 和 2.29 变化到 573 K 时的 1.02 eV 和 1.65。肖特基二极管的温度相关 IV 特性显示出高斯分布，产生的平均势垒高度为 1.23 eV 和标准偏差分别为 0.147 V。