Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

中文翻译：

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具有 GdOX 势垒的垂直磁隧道结中层间耦合的温度依赖性

具有 GdOX 隧道势垒的垂直磁隧道结显示出独特的电压可控层间磁耦合效应。在这里，我们通过检查隧道磁阻的温度依赖性和从室温到 11 K 的层间耦合来研究 GdOX 势垒的质量和这些结中的耦合机制。电导仅占总室温电导的一小部分，即 14%，类似于 AlOX 和 MgO 势垒。然而，层间耦合显示出异常强烈的温度依赖性，包括低于 80 K 的符号变化。